The sublattice magnetizations M_A and M_B as functions of temperature and the phase diagrams of the system are obtained by the numerical calculation. 通过数值计算,得出了亚晶格磁化强度M_A,M_B。 随温度变化的曲线和系统在不同配位数情况下的相图。
For the ferrimagnetic case, the relations of sublattice magnetizations M_A M_B and the total magnetization M with the temperature are obtained, respectively. 在亚铁磁情况下,通过数值求解,得出了亚晶格磁化强度M_A,M_B和系统总磁化强度M随温度变化的曲线,并和以上铁磁情况所得结果进行比较。
The results ofcalculating show that the defect types are the antisite atoms on either sublattice for nonstoichiometry in FeAl, Fe3Al, NiAl, Ni3Al and TiAl. The results are in good agreement with the experimental data and other theoretic results. 计算结果表明当FeAl、Fe_3Al、NiAl、Ni_3Al和TiAl有序合金偏离理想化学配比成分时出现的结构缺陷类型为，分别在各子晶格中出现反位置缺陷，与实验结果和其它理论结果相符合，其中NiAl的缺陷类广西人学硕十论文型与某些理论结果有所不同。
The experimental result of M-H indicates that the coercivity is weak in doped Dy system. It is suggested that the peak of magnetization comes from the rotation of magnetic domains in Dy-O-Dy sublattice. 用替代离子的磁性效应对磁结构的变化规律进行了解释;La(Dy)亚晶格的磁畴旋转导致出现磁化强度峰.
According to the Landau?Devonshire theory and the hypothesis of the sublattice, it demonstrates reasonably the magnetic behaviors of the alloys and obtains more satisfactory results which are in good agreement with experiment data. 按照Landau Devonshire理论和次晶格假设,合理地解释了该系合金的磁行为,并且其数值结果与实验数据较为一致。
The implanted silicon occupying Ga Sublattice sites behaves as the shallow donor Si_(Ga) and that being held on As sublattice sites by boron behaves as the shallow acceptor complex B_(Ga) Si_(as) or Si_(As). 认为BF~+的影响主要反应在B的影响,由于B的掺入使B替Ga位从而促使大量Si去替As位,形成B_(Ga)-Si_(As)和Si_(As)受主,从而减少了Si_(Ga)的施主浓度并且补偿了n型载流子浓度。
